Faculty Profile

• Overview
• Academics
• Research
• Publications
• Honors

Education

• Ph.D. in Electrical Engineering and Computer Science, Northwestern University, 2011

Biography

Prof. Can Bayram is an Assistant Professor in the Department of Electrical and Computer Engineering of University of Illinois at Urbana-Champaign, IL, USA. He is an expert in III-V materials and photonic and electronic devices. He has performed more than 3,000+ epitaxial growths with metalorganic chemical vapor deposition (MOCVD) systems and fabricated detectors, light emitting diodes, solar cells, resonant tunneling diodes, and transistors in class 100 and 1000 cleanrooms totaling 20,000+ hrs equipment usage. His current research interests lie in the intersection of novel III-V materials, hetero-structures, and photonic and electronic quantum devices. Particularly, his research group explores novel materials, devices, and their 3D hetero-integration on unconventional platforms such as graphene and silicon; investigates heat transport across/through semiconductors; efficiency droop mechanisms and remedies in AlInGaN emitters; and ultra-fast THz photonics/electronics. Prof. Bayram￿s work has been recognized widely. He is the recipient of the 2018 International Union of Pure and Applied Physics Young Scientist Prize in Optics, the 2018 IEEE Nanotechnology Council Early Career Award, a 2018 Dean's Award for Excellence in Research for Assistant Professor, a 2018 Turkish American Scientists & Scholars Association Young Scholar Award, a 2017 NSF CAREER Award, the 2017 CS Mantech Best Student Paper Award, a 2016 AFOSR Young Investigator Award, the 2014 IEEE Electron Devices Society Early Career Award, and the Best Paper Award at the 11th International Conference on Infrared Optoelectronics.

Prof. Bayram is an affiliate faculty of Micro and Nanotechnology Laboratory. He has (co-) authored 43 journal papers (h-index ≥ 22), 33 conference proceeding papers, 2 book chapters, and has ≥ 47 patents issued/pending. For his achievements in ultraviolet-to-terahertz engineering of III-V semiconductor materials and devices, OSA, SPIE, and IEEE recognized him with senior member status.

Prof. Bayram worked as a Postdoctoral Research Scientist in the Silicon Technologies Division at the IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA from 2011 till 2014. His postdoctoral work at IBM on a novel means of thin film technology achieved record-breaking specific power solar cells and was featured on the cover of Advanced Energy Materials. He has - for the first time - integrated GaN-based devices on CMOS-compatible silicon substrates. This work was highlighted as the frontispiece in the Advanced Functional Materials issue. He demonstrated direct epitaxy of GaN on Graphene for the first time, as published in Nature Communications.

Prof. Bayram received the Ph.D. degree from Prof. Manijeh Razeghi, Center for Quantum Devices, EECS of Northwestern University, IL, USA with a focus on Solid State and Photonics in 2011. His thesis work has demonstrated the first ultraviolet regime single photon detection, the first hybrid LED, and the first GaN intersubband devices. He received IEEE Electron Devices and IEEE Photonics Societies' fellowship awards and the Laser Technology, Engineering and Applications Award from SPIE. He was an IBM and Link Foundation PhD fellow and the recipient of Boeing Engineering and Dow Sustainability Innovation awards.

For more information

• Prof. Bayram's Research Group: Innovative COmpound semiconductoR LABoratory (ICORLAB)

Teaching Statement

Semiconductor fundamentals are essential in understanding everyday electronic and photonic devices. Undergraduate education should provide a solid foundation in semiconductors and should relate to everyday solid state devices. My goal as an instructor is to get students explain device behavior from the atomic scale up. I achieve this via first motivating the class for the big picture and then focusing on the atomic scale and describing atomic interactions leading to macroscopic effects observed in solid state devices. By building up the device behavior through atomic engineering, students understand the fundamentals governing everyday semiconductor devices such as light emitting diodes, solar cells, and transistors. It is notable that underlying physics, engineering, and science of solid state devices remain the same half a century; however, their applications ￿ which I deem most important as an engineering faculty ￿ diverse speedily. I see my role as a faculty not only to teach the fundamentals to the students but also making them aware of many out-there opportunities in the world. In the midst of fast-paced technology, one way to enable this is updating teaching tools and course materials. My instruction is geared towards enabling students become aware that microelectronics and photonics field is beyond the conventional solid state device applications and exciting them into the emerging interdisciplinary areas. I firmly believe teaching and research go hand-in-hand. I bring real-life problems to the classroom. Students need to leave their comfort zone, forego the classical classroom mentality, and look at tomorrow's needs via extending their knowledge, skills, and self. I bring fundamental knowledge, updated tools, and targeted means to the classroom for them do so.

Other Undergraduate Advising Activities

• "Application of Controlled Spalling to Thin-film Lithium Niobate Transducers" (Senior Thesis, Dec. 2018, Dennis Rich).
• "Thin-film GaN HEMTs For Flexible Electronics" (Senior Thesis, May 2017, Joshua Perozek)
• "Simulation of Zinc-blende Gallium Nitride High Electron Mobility Transistors For Normally-off Operation" (Senior Thesis, May 2017, Ryan Grady).
• "Optimization of Off-State Breakdown Voltage in GaN High Electron Mobility Transistors" (Senior Thesis, May 2016, Begum Kasap).
• "Normally-off GaN Transistors" (Senior Thesis, May 2016, Philip Tsai).

Research Statement

Our current research interests lie in the intersection of novel III-V materials and hetero-structures & photonic and electronic quantum devices. Particularly, we explore novel materials, devices, and their 3D hetero-integration on unconventional platforms such as graphene and silicon, heat transport across/through semiconductors, efficiency droop mechanisms and remedies in AlInGaN emitters, and ultra-fast THz photonics/electronics. Our work is interdisciplinary. Our team demonstrates strong skills in solid state physics, first principles calculations, Technology Computer Aided Design, micro/nano-fabrication, and reliability characterization and analysis of semiconductor devices.

Post-Doctoral Research Opportunities

Our group currently has an opening for a postdoctoral researcher who has HANDS-ON experience in the micro/nano-FABRICATION of compound semiconductor devices (including light emitting diodes and transistors based on GALLIUM NITRIDE devices) in a cleanroom environment. Postdoctoral candidates are encouraged to contact Prof. Can Bayram directly via email (and should attach their CV and the contact information for at least two references) for consideration. The position is now open until filled.

Graduate Research Opportunities

Innovative COmpound semiconductoR LABoratory (ICORLAB) led by Prof. Can Bayram in the Department of Electrical and Computer Engineering at University of Illinois at Urbana-Champaign is inviting undergraduate and graduate students to apply for PhD thesis openings in the areas of (a) Novel III-V materials and hetero-structures, and (b) Photonic and electronic quantum devices. Further details can be found at our group webpage (https://icorlab.ece.illinois.edu/). Our graduate students are recognized internally (as UIUC College of Engineering Yunni & Maxine Pao Memorial Fellows, UIUC ECE Ernest A. Reid Fellows, UIUC ECE Nick and Katherine Holonyak, Jr. Outstanding Research Awardees, Graduate College Travel Grantees for Dissertation Research), nationally (as NSF Graduate Research Fellows, NASA Space Technology Research Fellows) and internationally (as Conference Best Paper Awardees, Conference Travel Grantees, Siegman International School on Lasers Invitees). Incoming and/or interested graduates are encouraged to browse our group webpage and contact Prof. Can Bayram directly via email (and should attach their CV and unofficial UG/GRAD transcripts).

Undergraduate Research Opportunities

Our group invites highly motivated undergraduates, currently enrolled at our University of Illinois at Urbana-Champaign, to join our research team. Particularly, students who wish to have experience in semiconductor devices and who are passionate about creating next generation photonic and micro/nano-electronic devices are welcomed. Historically, students who joined our research team as early as in their freshman/sophomore years have been later recognized internally (as UIUC College of Engineering Scholars, UIUC Campus Honors Program Summer Research Grantees, UIUC ECE Robert C. MacClinchie Scholars, UIUC ECE Michael E. Napier Memorial Awardees. UIUC MATSCI Alfred W. Allen Awardees, UIUC MATSCI Earl J. Eckel Scholars, UIUC ECE Distinguished Research Fellows, UIUC ECE Distinguished Fellows, University of Illinois Campus Churchill Scholarship Nominees) and externally (as Goldwater Scholars, NSF Graduate Research Fellows, SPIE Scholars, IEEE Women in Photonics Travel Grantees). UG researchers are expected to perform (at least one semester) summer research in our group. Please contact Prof. Can Bayram directly via email (and attach your CV and unofficial transcript showing your courses) to inquire about our any position/project openings.

Research Interests

• Efficiency droop mechanisms and remedies in AlInGaN emitters
• Ultra-fast THz photonics/electronics
• Heat transport across/through semiconductors
• Novel materials, devices, and their 3D hetero-integration on unconventional platforms such as graphene and silicon

Research Topics

• Beyond CMOS
• Charge particle physics and engineering
• Electronics, Plasmonics, and Photonics
• Energy
• Micro & nanoelectromechanical M/NEMS integrated systems
• Photonics: optical engineering and systems
• Quantum optics, cryptography, information, and computing
• RF and microwave engineering
• Semiconductor devices and manufacturing
• Solar and renewable technology

Books Authored or Co-Authored (Original Editions)

• C. Bayram. III-nitride Optoelectronic Devices: AlGaInN Gap Engineering from Ultraviolet and Visible Wavelengths towards Terahertz Regime; ProQuest, UMI Dissertation Publishing, 2012; ISBN-10: 1249058430; ISBN-13: 978-1249058434.

Books Edited or Co-Edited (Original Editions)

• Carbon Nanotubes, Graphene, and Emerging 2D Materials for Electronic and Photonic Devices IX, M. Razeghi, M. Ghazinejad, C. Bayram, J. S. Yu, Eds., SPIE Press, Bellingham, WA, 2016; ISBN-13: 9781510602557.
• Carbon Nanotubes, Graphene, and Emerging 2D Materials for Electronic and Photonic Devices VIII, M. Razeghi, M. Ghazinejad, C. Bayram, J. S. Yu, Y. H. Lee, Eds., SPIE Press, Bellingham, WA, 2015; ISBN-10: 1628417188; ISBN-13: 978-1628417180.

Chapters in Books

• C. Bayram and R. Liu, ￿Exploring the Next Phase in Gallium Nitride Photonics: Cubic phase light emitters hetero-integrated on silicon, In Volume 96. Nitride Semiconductors, Z. Mi. and C. Jagadish, Eds., Academic Press (Elsevier), San Diego, CA, USA (2017).
• C. Bayram, D. K. Sadana, and M. Razeghi, AlGaN-based Intersubband Device Technology. In The Wonder of Nanotechnology: Quantum Optoelectronic Devices and Applications, M. Razeghi. L. Esaki, and K. von Klitzing, Eds., SPIE Press, Bellingham, WA, USA, pp. 175-206 (2013).

Selected Articles in Journals

• R. Liu, C. McCormick, and C. Bayram, ￿Comparison of Structural and Optical Properties of Blue Emitting In0.15Ga0.85N/GaN Multi-Quantum-Well Layers Grown on Sapphire and Silicon Substrates,￿ AIP Advances 9, 025306 (2019).
• K. Park, A. Mohamed, M. Dutta, M. Stroscio, and C. Bayram, ￿Electron Scattering via Interface Optical Phonons with High Group Velocity in Wurtzite GaN-based Quantum Well Heterostructure," Sci. Rep. 8:15947 (2018).
• R. Liu, R. Schaller, C.-Q. Chen, and C. Bayram, ￿High internal quantum efficiency ultraviolet emission from phase-transition cubic GaN integrated on nanopatterned Si(100)," ACS Photonics 5 (3), 955 - 963 (2018).
• K.-T. Lee, C. Bayram, D. Piedra, E. Sprogis, H. Deligianni, B. Krishnan, G. Papasouliotis, A. Paranjpe, E. Aklimi, K. Shepard, W. J. Gallagher, T. Palacios, and D. K. Sadana, ￿Heterogeneous Integration of GaN Devices on a 200 mm Si(100) Wafer via Scalable CMOS Technology,￿ IEEE Electron Device Lett. 38 (8), 1094 - 1096 (2017).
• K. Park, M. A. Stroscio, and C. Bayram, ￿Investigation of electron mobility and saturation velocity limits in gallium nitride using uniaxial dielectric continuum model,￿ Journal of Applied Physics 121, 245109 (2017).
• R. Grady and C. Bayram, ￿Simulation of zincblende AlGaN/GaN high electron mobility transistors for normally-off operation,￿ J. Phys. D: Appl. Phys. 50, 265104 (2017).
• J. Perozek, H.-P. Lee, B. Krishnan, G. Papasouliotis, A. Paranjpe, K. B. Reuter, D. K. Sadana, and C. Bayram, ￿Investigation of Structural, Optical, and Electrical Characteristics of an AlGaN/GaN High Electron Mobility Transistor Structure across a 200 mm Si (111) Substrate,￿ J. Phys. D-Appl. Phys. 50, 055103 (2017).
• H-P Lee, J. Perozek, L. N. D. Rosario, and C. Bayram, ￿Investigation of AlGaN/GaN high electron mobility transistor structures on 200-mm silicon (111) substrates employing different buffer layer configurations, Nature Scientific Reports 6: 37588 (2016).
• K. Park and C. Bayram, ￿Thermal Resistance Optimization of GaN / Substrate Stacks Considering Thermal Boundary Resistance and Temperature-dependent Thermal Conductivity,￿ Appl. Phys. Lett. 109, 151904 (2016).
• R. Liu and C. Bayram, ￿Maximizing Cubic Phase Gallium Nitride Surface Coverage on Nano-patterned Silicon (100)," Appl. Phys. Lett. 109, 042103 (2016).
• R. Liu and C. Bayram, ￿Cathodoluminescence study of luminescence centers in hexagonal and cubic phase GaN hetero-integrated on Si(100),￿ J. Appl. Phys. 120, 025106 (2016).
• J. Kim￿ & C. Bayram￿(￿ equal contribution), H. Park, C.-W. Cheng, C. Dimitrakopoulos, J. A. Ott, K. B. Reuter, S. W. Bedell, and D.K. Sadana, ￿Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene, Nat. Commun. 5: 4836 (2014).
• C. Bayram, J. Ott, K.-T. Shiu, C.-W. Cheng, Y. Zhu, J. Kim, M. Razeghi, and D.K. Sadana, ￿Cubic Phase GaN on Nano-grooved Si (100) via Maskless Selective Area Epitaxy,￿ Adv. Funct. Mater. 24 (28), 4492 (2014).
• S. W. Bedell, C. Bayram, K. Fogel, P. Lauro, J. Kiser, J. Ott, Y. Zhu, and D. Sadana, "Vertical Light-Emitting Diode Fabrication by Controlled Spalling," Applied Physics Express 6 (11), 112301 (2013).
• D. Shahrjerdi, S. W. Bedell, C. Bayram, C. C. Lubguban, K. Fogel, P. Lauro, J.A. Ott, M. Hopstaken, M. Gayeness, and D. Sadana, "Ultra-Light High-Efficiency Flexible InGaP/(In)GaAs Tandem Solar Cells on Plastic," Advanced Energy Materials 3 (5), 566￿571 (2013).
• Y. Zhang, S. Gautier, C.-Y. Cho, E. Cicek, Z. Vashaei, R. McClintock, C.Bayram, Y. Bai, and M. Razeghi, "Near Miliwatt Power AlGaN-based Ultraviolet Light Emitting Diodes based on Lateral Epitaxial Overgrowth of AlN on Si(111)," Applied Physics Letters 102, 011106 (2013).
• D. Shahrjerdi, S. W. Bedell, C. Ebert, C. Bayram, B. Hekmatshoar, K. Fogel, P. Lauro, M. Gaynes, T. Gokmen, J. Ott, and D. K. Sadana, "High-Efficiency Thin- Film InGaP/InGaAs/Ge Tandem Solar Cells Enabled By Controlled Spalling Technology," Applied Physics Letters 100, 053901 (2012).
• C. Bayram, "High quality AlGaN/GaN superlattices for near- and mid-infrared intersubband transitions," Journal of Applied Physics 111, 013514 (2012).
• C. Bayram, Z. Vashaei, and M. Razeghi, "Reliability in room-temperature negative differential resistance characteristics of low-aluminium-content AlGaN/GaN double-barrier resonant tunneling diodes," Applied Physics Letters 97, 181109 (2010).
• Z. Vashaei, C. Bayram, P. Lavenus, and M. Razeghi. ￿Photoluminescence characteristics of polar and nonpolar AlGaN/GaN superlattices,￿ Applied Physics Letters 97, 121918 (2010).
• C. Bayram, Z. Vashaei, and M. Razeghi, ￿Room temperature negative differential resistance characteristics of polar III-nitride resonant tunneling diodes,￿ Applied Physics Letters 97, 092104 (2010).
• E. Cicek, Z. Vashaei, R. McClintock, C. Bayram, and M. Razeghi, "Geiger-mode operation of ultraviolet avalanche photodiodes grown on sapphire and free- standing GaN substrates," Applied Physics Letters 96, 261107 (2010).
• Z. Vashaei, E. Cicek, C. Bayram, R. McClintock, and M. Razeghi, "GaN avalanche photodiodes grown on m-plane freestanding GaN substrate," Applied Physics Letters 96, 201908 (2010).
• Z. Vashaei, C. Bayram, and M. Razeghi, ￿Demonstration of negative differential resistance in GaN/AlN resonant tunneling diodes at room temperature,￿ Journal of Applied Physics 107, 083505 (2010).
• C. Bayram, Z. Vashaei, and M. Razeghi, ￿AlN/GaN double-barrier resonant tunneling diodes grown by metal-organic chemical vapor deposition,￿ Applied Physics Letters 96, 042103 (2010).
• C. Bayram, N. P￿-Laperne, and M. Razeghi, ￿Effects of well width and growth temperature on optical and structural characteristics of AlN/GaN superlattices grown by metal-organic chemical vapor deposition,￿ Applied Physics Letters 95, 201906 (2009).
• N. P￿-Laperne, C. Bayram, L. Nguyen-Th￿R. McClintock, and M. Razeghi, "Tunability of Intersubband absorption from 4.5 to 5.3 ￿m in a GaN/Al0.2Ga0.8N superlattices grown by metalorganic chemical vapor deposition," Applied Physics Letters 95, 131109 (2009).
• C. Bayram and M. Razeghi, "ULTRAVIOLET DETECTORS: Nitrides push performance of UV photodiodes," Laser Focus World 45(9), p. 47-51 (2009).
• J. L. Pau, R. McClintock, K. Minder, C. Bayram, P. Kung, M. Razeghi, E. Munoz, and D. Silversmith, ￿Gieger-mode operation of back-illuminated GaN avalanche photodiodes,￿ Applied Physics Letters 91, 041104 (2007).
• C. Bayram, D. Rogers, F. H. Teherani, and M. Razeghi, "Fabrication and Characterization of Novel Hybrid Green LEDs Based on Substituting n-type ZnO for n-type GaN in an Inverted p-n Junction," Journal of Vacuum Science and Technology B 27, 1784 (2009).
• V. E. Sandana, D. J. Rogers, F. H. Teherani, R. McClintock, C.Bayram, M. Razeghi, H.-J. Drouhin, M.C. Clochard, V. Sallet, G. Garry, and F. Falyouni, "Comparison of ZnO Nanostructures Grown Using pulsed layer deposition, metalorganic chemical vapor deposition, and physical vapor transport", Journal of Vacuum Science and Technology B 27, 1678 (2009).
• C. Bayram, N. P￿-laperne, R. McClintock, B. Fain and M. Razeghi, "Pulsed Metalorganic Chemical Vapor Deposition of High Quality AlN/GaN Superlattices for Near-Infrared Intersubband Transitions," Applied Physics Letters 94, 121902 (2009).
• C. Bayram and M. Razeghi, "Stranski-Krastanov growth of InGaN quantum dots emitting in green spectra," Applied Physics A: Materials Science & Processing 96, 403 (2009).
• C. Bayram, J. L. Pau, R. McClintock, and M. Razeghi, "Comprehensive study of blue and green multi-quantum-well light emitting diodes grown on conventional and lateral epitaxial overgrowth GaN," Applied Physics B: Lasers and Optics 95, 307 (2009).
• J. L. Pau, C. Bayram, P. Giedraitis, R. McClintock, and M. Razeghi, ￿GaN nanostructured p-i-n photodiodes,￿ Applied Physics Letters 93, 221104 (2008).
• C. Bayram, J. L. Pau, R. McClintock, M. Razeghi, M. P. Ulmer, and D. Silversmith, ￿High Quantum Efficiency Back-illuminated GaN Avalanche Photodiodes,￿ Applied Physics Letters 93, 211107 (2008).
• C. Bayram, F. H. Teherani, D. Rogers, and M. Razeghi, ￿A hybrid green light- emitting diode comprised of n-ZnO/(InGaN/GaN) multi-quantum wells/p-GaN,￿ Applied Physics Letters 93, 081111 (2008).
• C. Bayram, J. L. Pau, R. McClintock, and M. Razeghi, ￿Performance enhancement of GaN ultraviolet avalanche photodiodes with p-type delta- doping,￿ Applied Physics Letters 92, 241103 (2008).
• C. Bayram, J. L. Pau, R. McClintock, and M. Razeghi, ￿Delta-doping optimization for high quality p-type GaN,￿ Journal of Applied Physics 104, 083512 (2008).
• J. L. Pau, C. Bayram, R. McClintock, D. Silversmith, and M. Razeghi, ￿Back- illuminated separate absorption and multiplication GaN avalanche photodiodes￿ Applied Physics Letters 92, 101120 (2008).
• J. L. Pau, R. McClintock, C. Bayram, K. Minder, D. Silversmith, and M. Razeghi, ￿High Optical Response in Forward Biased (In,Ga)N-GaN MultiquantumWell Diodes under Barrier Illumination,￿ IEEE Journal of Quantum Electronics 44, 346 (2008).
• K. Minder, J. L. Pau, R. McClintock, P. Kung, C. Bayram, M. Razeghi, and D. Silversmith, ￿Scaling in GaN avalanche photodiodes designed for back- illumination,￿ Applied Physics Letters 91, 073513 (2007).
• R. McClintock, J. L. Pau, K. Minder, C. Bayram, P. Kung, and M. Razeghi, ￿Hole-initiated multiplication in back-illuminated GaN avalanche photodiodes,￿ Applied Physics Letters 90, 141112 (2007).

Articles in Conference Proceedings

• C. Bayram, R. Grady, and K. Park ￿Novel cubic phase III-nitride complementary metal-oxide-semiconductor transistor technology,￿ Proc. SPIE 10540, 105401G (2018).
• C. Bayram￿ & J. Kim￿ (￿ equal contribution), H. Park, C.W. Cheng, C. Dimitrakopoulos, J. Ott, K.B. Reuter, S.W.Bedell, and D.K. Sadana, ￿A Novel Thin-film Blue Light Emitting Diode via GaN-on-Graphene Technology,￿ IEEE Photonics Conference, Page(s): 35 - 36, FL, USA, Oct. 1-5, 2017.
• C. Bayram and R. Liu ￿Cubic Phase Light Emitters Hetero-integrated on Silicon,￿ IEEE Photonics Conference, Page(s):39 - 40, FL, USA, Oct. 1-5, 2017.
• K. Park, M. A. Stroscio, and C. Bayram, ￿Electron momentum relaxation rates via Frohlich interaction with polar-optical-phonons in bulk wurtzite gallium nitride,￿ International Workshop on Computational Nanotechnology, Windermere, UK, June 5 - 9 (2017).
• H.-P. Lee, J. Perozek, and C. Bayram, ￿Scaling AlGaN/GaN High Electron Mobility Transistor Structures onto 200-mm Silicon (111) Substrates through Novel Buffer Layer Configurations,￿ International Conference on Compound Semiconductor Manufacturing Technology, Indian Wells, CA, USA, May 22 - 25 (2017).
• R. Liu and C. Bayram, ￿Cubic Phase GaN Integrated on CMOS-Compatible Silicon (100),￿ International Conference on Compound Semiconductor Manufacturing Technology, Indian Wells, CA, USA, May 22 - 25 (2017).
• C. Bayram, ￿InGaN-based flexible light emitting diodes,￿ Proc. SPIE 10104, 101041Y (2017).
• C. Bayram and R. Liu, ￿Polarization-free integrated gallium-nitride photonics,￿ Proc. SPIE 10111, 101110Y (2017).
• C. Bayram￿ & J. Kim￿ (￿ equal contribution), H. Park, C.-W. Cheng, C. Dimitrakopoulos, J. A. Ott, K. B. Reuter, S. W. Bedell, and D.K. Sadana, ￿Vertical thinking in blue light emitting diodes: GaN-on-graphene technology,￿ Proc. SPIE 9364, 93641C (2015).
• C. Bayram, J. Ott, K. T. Shiu, C. W. Cheng, Y. Zhu, J. Kim, D. K. Sadana, and M. Razeghi, ￿Polarization-free GaN emitters in the ultraviolet and visible spectra via heterointegration on CMOS-compatible Si (100),￿ Proc. SPIE 9370, 93702F (2015).
• S. W. Bedell, D. Shahrjerdi, K. Fogel, P. Lauro, C. Bayram, B. Hekmatshoar, N. Li, J. Ott, and D. Sadana, ￿Advanced flexible electronics: challenges and opportunities,￿ Proc. SPIE 9083, 90831G (2014).
• D. Shahrjerdi, S. W. Bedell, C. Bayram, and D. K. Sadana, "Flexible InGaP/(In)GaAs Tandem Solar Cells with Very High Specific Power," 39th IEEE Photovoltaic Specialists Conference Proceedings (2013)
• C. Bayram, K.T. Shiu, Y. Zhu, C.W. Cheng, D.K. Sadana, F.H. Teherani, D.J. Rogers, V. E. Sandana, P. Bove, Y. Zhang, S. Gautier, C.-Y. Cho, E. Cicek, Z. Vashaei, R. McClintock, and M. Razeghi, "Engineering future light emitting diodes and photovoltaics with inexpensive materials: Integrating ZnO and Si into GaN-based devices," Proc. SPIE 8626, 86260L (2013).
• C. Bayram, K.T. Shiu, Y. Zhu, C.W. Cheng, D.K. Sadana, Z. Vashaei, E. Cicek, R. McClintock, and M. Razeghi, "Gallium Nitride on Silicon for Cheap, Scalable, and Sustainable Photonics," Proc. SPIE 8631, 863112 (2013).
• D. Shahrjerdi, S. W. Bedell, B. Hekmatshoar, C. Bayram, and D. Sadana, "New Paradigms for Cost-Effective III-V Photovoltaic Technology," ECS Transactions, 50 (40) 15-22 (2013).
• D. Shahrjerdi, S. W. Bedell, C. Ebert, C. Bayram, B. Hekmatshoar, K. Fogel, P. Lauro, M. Gaynes, T. Gokmen, J. A. Ott, and D. K. Sadana, "High-Efficiency Thin-Film InGaP/InGaAs/Ge Tandem Solar Cells Enabled By Controlled Spalling Technology", 38th IEEE Photovoltaic Specialists Conference Proceedings (2012).
• C. Bayram, D. K. Sadana, Z. Vashaei, and M. Razeghi, ￿Reliable GaN-based resonant tunneling diodes with reproducible room-temperature negative differential resistance￿, Proc. SPIE 8268, 826827 (2012).
• Z. Vashaei, C. Bayram, R. McClintock, and M. Razeghi, ￿Effects of substrate quality and orientation on the characteristics of III-nitride resonant tunneling diodes￿, Proc. SPIE 7945, 79451A (2011).
• M. Razeghi, C. Bayram, Z. Vashaei, E. Cicek, and R. McClintock, ￿III-Nitride Optoelectronic Devices: From ultraviolet detectors and visible emitters towards terahertz intersubband devices￿, 23rd Annual Meeting of the IEEE Photonics- Society Denver, CO, Nov. 07-11 (2010).
• R. McClintock, E. Cicek, Z. Vashaei, C. Bayram, M. Razeghi, and Melville P. Ulmer, ￿III-Nitride Based Avalanche Photo Detectors￿, Proc. SPIE 7780, 77801B (2010).
• E. Cicek, Z. Vashaei, C. Bayram, R. McClintock, and M. Razeghi, ￿Comparison of ultraviolet APDs grown on free-standing GaN and sapphire substrates￿, Proc. SPIE 7780, 77801P (2010).
• M. Razeghi, C. Bayram, R. McClintock, F.H. Teherani, D.J. Rogers, and V.E. Sandana, ￿Novel Green Light Emitting Diodes: Exploring Droop-free Lighting Solutions for a Sustainable Earth￿, Journal of Light Emitting Diodes 2 (1) 1-33 (2010).
• M. Razeghi and C. Bayram, ￿Material and design engineering of (Al)GaN for high-performance avalanche photodiodes and intersubband applications,￿ Proc. SPIE 7366, 73661F (2009)
• C. Bayram, B. Fain, N. P￿-Laperne, R. McClintock, and M. Razeghi, ￿Pulsed metalorganic chemical vapor deposition of high quality AlN/GaN superlattices for intersubband transitions,￿ Proc. SPIE 7222, 722212 (2009).
• R. McClintock, J. L. Pau Vizcaino, C. Bayram, B. Fain, P. Giedraitis, M. Razeghi, and M. P. Ulmer,￿III-nitride avalanche photodiodes,￿ Proc. SPIE 7222, 72220U (2009).
• C. Bayram, D. J. Rogers, F. Hosseini Teherani, and M. Razeghi, ￿Hybrid green LED based on nZnO/MQWInGaN/pGaN,￿ Proc. SPIE 7217, 72170P (2009).
• J.L. Pau, C. Bayram, P. Giedraitis, R. McClintock, and M. Razeghi, ￿GaN-based nanostructured photodetectors,￿ Proc. SPIE 7222, 722214 (2009).
• R. McClintock, J. L. P. Vizcaino, K. Minder, C. Bayram and M. Razeghi, ￿III- nitride photon counting avalanche photodiodes,￿ Proc. SPIE 6900, 69000N (2008).
• K. Minder, F. H. Teherani, D. Rogers, C. Bayram, R. McClintock, P. Kung, and M. Razeghi, ￿Etching of ZnO towards the development of ZnO homostructure LEDs,￿ Proc. SPIE 6474, 64740Q (2007).
• P. Kung, R. McClintock, J. L. P. Vizcaino, K. Minder, C. Bayram, and M. Razeghi, ￿III-nitride avalanche photodiodes,￿ Proc. SPIE 6479, 64791J (2007).
• R. McCLintock, K. Minder, A. Yasan, C. Bayram, F. Fuchs, P. Kung, and M. Razeghi, ￿Solar-blind avalanche photodiodes,￿ Proc. SPIE 6127, 61271D (2006).
• C. Bayram, S. Olcum, M. N. Senlik, and A. Atalar, ￿Bandwidth improvement in a cMUT array with mixed sized elements,￿ Proc. IEEE Ultrason. Symp., pp. 1956-1959. (2005).
• S. Olcum, M. N. Senlik, C. Bayram and A. Atalar, ￿Design charts to maximize the gain-bandwidth product of capacitive micromachined ultrasonic transducers,￿ Proc. IEEE Ultrason. Symp. Pp. 1941-1944. (2005).

Invited Lectures

• Atomic Engineering of Gallium Nitride Semiconductors for Ultraviolet-to-Terahertz Photonics
• LIGHTing and NETworking (LIGHTNET) through Advanced Solid State Lighting
• AlXGa(1-X)N-based intersubband devices
• Vertical thinking in light emitting diodes
• Novel cubic phase III-nitride complementary metal-oxide-semiconductor transistor technology
• Next Generation Gallium Nitride Microelectronics & Photonics
• Vertical thinking in light emitting diodes
• Next Generation Gallium Nitride Microelectronics & Photonics
• Investigating Thermal Properties of Vertically-Integrated GaN Heterostructures
• InGaN-based flexible light emitting diodes
• Polarization-free integrated gallium-nitride photonics
• GaN Devices Gearing up for the 21st Century
• Vertical Thinking in Light Emitting Diodes
• GaN Devices Gearing up for the 21st Century
• Vertical Thinking in Light Emitting Diodes
• Vertical Thinking in Light Emitting Diodes
• Light Emitting Diode Gearing up for the 21st Century
• Vertical thinking in blue light emitting diodes: GaN-on-graphene technology
• Polarization-free GaN emitters in the ultraviolet and visible spectra via heterointegration on CMOS-compatible Si (100)
• Vertical thinking in light emitting diodes
• Gallium nitride compound semiconductors for ultraviolet, visible, and terahertz photonics
• LED Lighting
• Renewable Energy and Energy-Efficiency in Turkey: Research and Development Trends
• Gallium Nitride Compound Semiconductors for Ultraviolet, Visible, and Terahertz Photonics
• Gallium Nitride on Silicon for Cheap, Scalable, and Sustainable Photonics
• Engineering future light emitting diodes and photovoltaics with inexpensive materials: Integrating ZnO and Si into GaN-based devices
• Applied Photonics for a Sustainable Earth: High Efficiency Light Emitting Diodes and Solar Cells
• Reliable GaN-based resonant tunneling diodes with reproducible room-temperature negative differential resistance
• AlGaInN gap engineering from ultraviolet and visible wavelengths towards terahertz regime
• III-Nitride Optoelectronic Devices
• Novel Green Light Emitting Diodes: Innovating Droop-free Lighting Solutions for Sustainable Earth
• Novel Green Light Emitting Diodes
• III-Nitride Optoelectronic Devices

Patents

• C. Bayram, R. Grady, and K. Park, ￿Normally-off cubic phase GaN (c-GaN) HEMT having a gate electrode dielectrically insulated from a c-AlGaN capping layer￿ U.S. Patent 10,211,328, issued February 19, 2019.
• C. Bayram, C.P. D￿Emic, J. Kim, and D.K. Sadana, ￿Hetero-integration of III-N material on silicon,￿ U.S. Patent 10,056,251, issued August 21, 2018.
• C. Bayram and R. Liu, ￿Maximizing cubic phase group III-nitride on patterned silicon,￿ U.S. Patent 10,027,086, issued July 17, 2018.
• C. Bayram, S. W. Bedell, N. Li, K.T. Shiu, and D. K. Sadana, ￿Back contact LED through spalling,￿ U.S. Patent 9,865,769, issued January 9, 2018.
• C. Bayram, C.P. D'Emic, W.J. Gallagher, E. Leobandung, and D.K. Sadana, ￿Group III nitride integration with CMOS technology,￿ U.S. Patent 9,660,069, issued May 23, 2017.
• C. Bayram, C.-W. Cheng, T. Gokmen, N. Li, J.A. Ott, D.K. Sadana, and K.T. Shiu, ￿Polarization free gallium nitride-based photonic devices on nanopatterned silicon,￿ U.S. Patent 9,608,160, issued March 28, 2017.
• C. Bayram, C.P. D￿Emic, J. Kim, and D.K. Sadana, ￿Hetero-integration of III-N material on silicon,￿ U.S. Patent 9,601,583, issued March 21, 2017.
• C. Bayram, C. Dimitrakopoulos, K. Fogel, J. Kim, J.A. Ott, and D.K. Sadana, ￿Gallium nitride material and device deposition on graphene terminated wafer and method of forming the same,￿ U.S. Patent 9,574,287, issued February 21, 2017.
• C. Bayram, C.P. D￿Emic, W.J. Gallagher, E. Leobandung, and D.K. Sadana, ￿Group III nitride integration with CMOS technology,￿ U.S. Patent 9,564,526, issued February 7, 2017.
• C. Bayram, C.-W. Cheng, D.K. Sadana, and K.-T. Shiu, ￿Selective gallium nitride regrowth on (100) silicon,￿ U.S. Patent 9,391,144 (issued July 12, 2016).
• C. Bayram, C.P. D￿Emic, W.J. Gallagher, E. Leobandung, and D.K. Sadana, ￿Group III nitride integration with CMOS technology,￿ U.S. Patent 9,362,281, issued June 7, 2016.
• C. Bayram, C.P. D￿Emic, W.J. Gallagher, E. Leobandung, and D.K. Sadana, ￿Group III nitride integration with CMOS technology,￿ U.S. Patent 9,331,076, issued May 3, 2016.
• C. Bayram, S. W. Bedell, and D. K. Sadana, ￿Engineered base substrates for releasing III-V epitaxy through spalling,￿ U.S. Patent 9,245,747 (issued January 26, 2016).
• C. Bayram, D. K. Sadana, S. W. Bedell, and K. L. Saenger, Laser-initiated exfoliation of group iii-nitride films and applications for layer transfer and patterning,￿ U.S. Patent 9,236,271 (issued January 12, 2016).
• C. Bayram, C.-W. Cheng, D.K. Sadana, and K.-T. Shiu, ￿Heterogeneous integration of group iii nitride on silicon for advanced integrated circuits.￿ U.S. Patent 9,236,251 (issued January 12, 2016).
• C. Bayram, C.-W. Cheng, D.K. Sadana, and K.-T. Shiu, ￿Selective gallium nitride regrowth on (100) silicon,￿ U.S. Patent 9,099,381 (issued August 4, 2015).
• C. Bayram, C.-W. Cheng, D.K. Sadana, and K.-T. Shiu, ￿Selective gallium nitride regrowth on (100) silicon ,￿ U.S. Patent 9,059,075 (issued June 16, 2015).
• C. Bayram and D.K. Sadana, ￿Light emitting diodes with via contact scheme.￿ U.S. Patent 9,059,339 (issued June 16, 2015).
• C. Bayram, S.W. Bedell, K.E. Fogel, J. A. Ott, and D.K. Sadana, ￿Controlled spalling of group III nitrides containing an embedded spall releasing plane.￿ U.S. Patent 9,058,990 (issued June 16, 2015).
• C. Bayram, C.-W. Cheng, D.K. Sadana, and K.-T. Shiu, ￿Heterogeneous integration of group iii nitride on silicon for advanced integrated circuits.￿ U.S. Patent 9,053,930 (issued June 9, 2015).
• C. Bayram, C.-W. Cheng, D.K. Sadana, and K.-T. Shiu, ￿Dual phase gallium nitride material formation on (100) silicon.￿ U.S. Patent 9,048,173 (issued June 2, 2015).
• C. Bayram, D.K. Sadana, and K.-T. Shiu, ￿Group III nitrides on nanopatterned substrates.￿ U.S. Patent 8,927,398 (issued January 6, 2015).
• C. Bayram, J. O. Chu, C. Dimitrakopoulos, J. Kim, H. Park, and D.K. Sadana, ￿Thin film wafer transfer and structure for electronic devices.￿ U.S. Patent 8,916,451 (issued December 23, 2014).

Magazine Articles

• C. Bayram, ￿The power for change: van der Waals Epitaxy,￿ Compound Semiconductor Magazine 24 (3), 52 (April/May 2018).
• C. Bayram, "Green LEDs: The case for cubic GaN" Compound Semiconductor Magazine 22 (8), 27 (Dec. 2016).

Journal Editorships

• Associate Editor, IEEE Transactions on Electron Devices, 2019 - 2021
• Editorial Board Member, Journal of Physics: Photonics, 2019 - onwards
• Guest Editor, IEEE Nanotechnology Magazine, 2019

Conferences Organized or Chaired

• SPIE Photonics West, San Francisco, USA, February, 2018
• International Conference on Electron Devices and Solid-State Circuits, Taipei, October, 2017
• SPIE Optics + Photonics, San Diego, USA, August 6-10, 2017
• SPIE Optics + Photonics, San Diego, USA, August 28-Sept. 1, 2016
• CNST 14th Annual Nanotechnology Workshop, University of Illinois at Urbana-Champaign, IL, USA, May 5-6, 2016
• SPIE Optics + Photonics, San Diego, USA, August 9-13, 2015
• SPIE NanoScience + Engineering, San Diego, USA, August 9-13, 2015
• SPIE Photonics West, San Francisco, USA, February 7-12, 2015
• SPIE Photonics West, San Francisco, USA, February 1-6, 2014
• OPTIC, Chungli City, TAIWAN, Dec 5-7, 2013
• SPIE Photonics West, San Francisco, USA, February 2-7, 2013

Other Scholarly Activities

• Technical Committee, EDS Optoelectronic Devices, 2017 - present
• SPIE Scholarship Committee, 2017 - present

Professional Societies

• Member 2008-present Materials Research Society (MRS)
• Senior Member 2013-present SPIE Society (member since 2006)
• Senior Member 2016-present IEEE Society (member since 2005)
• Senior Member 2016-present IEEE Photonics Society (member since 2007)
• Senior Member 2016-present IEEE Electron Devices Society (member since 2009)
• Senior Member 2018-present Optical Society of America (OSA) (member since 2005)

Service to Federal and State Government

• German Research Foundation, 2018
• Croatian Science Foundation, 2017
• French National Research Agency (ANR), 2017
• Singapore National Research Foundation, 2017
• National Science Foundation (NSF), 2018, 2017, 2013
• Advanced Research Projects Agency ￿ Energy (ARPA-E), 2018, 2017
• Air Force Office of Scientific Research (AFOSR), 2018, 2017, 2016
• Israeli Ministry of Science, Technology and Space, 2018, 2017
• Dutch Research Council, 2016
• European Research Council (ERC), 2015
• Department of Energy (DOE), 2012

Teaching Honors

• List of Teachers Ranked as Excellent by Their Students, ECE 498/443, Spring (2018)
• Collins Scholar (2015)

Research Honors

• Invitation to the China-America Frontiers of Engineering Symposium (CAFOE), hosted by Qualcomm and organized by the National Academy of Engineering (NAE) and Chinese Academy of Engineering (CAE) (2019)
• International Union of Pure and Applied Physics (IUPAP) Young Scientist Prize in Optics (2018)
• IEEE Nanotechnology Council Early Career Award (2018)
• Dean's Award for Excellence in Research for Assistant Professor (2018)
• Turkish American Scientists & Scholars Association Young Scholar Award (2018)
• OSA Society Senior Membership (2018)
• NSF CAREER Award (2017)
• Compound Semiconductor Manufacturing Technology (CS MANTECH) Best Student Paper Award (Mr. Richard Liu) (2017)
• AFOSR Young Investigator Award (2016)
• IEEE Society Senior Membership (2016)
• IEEE Electron Devices Society Early Career Award (2014)
• FRONTISPIECE COVER - "Cubic Phase GaN on Nano-grooved Si (100) via Maskless Selective Area Epitaxy"￿ in the Advanced Functional Materials journal (2014)
• SPIE Society Senior Membership (2013)
• IBM Invention Achievement Awards (2013, 2013, 2014)
• INSIDE COVER - "Ultra-Light High-Efficiency Flexible InGaP/(In)GaAs Tandem Solar Cells on Plastic"￿, in the Advanced Energy Materials journal (2013)
• Best Paper Award at Infrared Optoelectronics Materials and Devices Conference, MIOMD-XI (2012)
• IBM Ph.D. Fellowship (2010)
• Link Foundation Energy Fellowship (2010)
• IEEE Electron Devices Society PhD Fellowship (2010)
• Boeing Engineering Student of the Year (2009)
• IEEE Photonics Society Graduate Student Fellowship (2009)
• SPIE Laser Technology, Engineering and Applications Scholarship (2009)
• Ludo Frevel Crystallography Scholarship (2009)
• Dow Sustainability Innovation Award (2008)
• IEEE Ultrasonics, Ferroelectrics, and Frequency Control Society Travel Award (2005)

Public Service Honors

• Docent (Associate Professor) title in Electrical Engineering from the Turkish Council of Higher Education (2014)